Elaboration of in situ phosphorus doped polysilicon films under LPCVD conditions : process modelling and characterization
نویسندگان
چکیده
منابع مشابه
An Understanding of in Situ Boron Doped Polysilicon Films by Characterization and Simulation
A new understanding of the deposition of in situ boron doped polysilicon based on a comparison between experimental results and modeling predictions, is proposed. The depletion of both silane and boron trichloride is put in evidence and the necessity of the use of injectors is established. 1 Introduction The in situ doping of polysilicon is of interest /I/, as this technique makes it possible t...
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A new polysilicon bridge-slider structure (Fig. 1), in which one end of the bridge is fixed and the other is connected to a plate sliding in two flanged guideways, is designed and fabricated to study the strain at fracture of LPCVD polysilicon. In the experiments, a mechanical probe is used to push against the plate end, compressing and forcing the bridge to buckle until it breaks. The distance...
متن کاملElectrical properties of in situ phosphorus- and boron-doped polycrystalline SiGeC films
The sheet resistance, effective carrier concentration, and Hall mobility of in situ boronand phosphorus-doped polycrystalline Si0.822yGe0.18Cy films are presented for carbon contents between 0% and 4%. Phosphorus and boron doping levels of 4310 and 2310 cm were achieved for the nand p-type layers, respectively, and remained largely unaffected by carbon content. The phosphorus-doped films showed...
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از محوری ترین اثراتی که یک فیلم سینمایی ایجاد می کند دیالوگ هایی است که هنرپیش گان فیلم میگویند. به زعم یک فیلم ساز, یک شیوه متأثر نمودن مخاطب از اثر منظوره نیروی گفتارهای گوینده, مثل نیروی عاطفی, ترس آور, غم انگیز, هیجان انگیز و غیره, است. این مطالعه به بررسی این مسأله مبادرت کرده است که آیا نیروی فراگفتاری هنرپیش گان به مثابه ی اعمال گفتاری در پنج فیلم هالیوودی در نسخه های دوبله شده باز تولید...
15 صفحه اولInfluence of the Doping Gas on the Axial Uniformity of the Growth Rate and the Electrical Properties of LPCVD In-Situ Doped Polysilicon Layers
We report in-situ doping of polysilicon grown on glass substrates by a LPCVD process. The growth rate, the resistivity and the dopant concentration of boron in-situ doped polysilicon layers are studied as a function of the deposition pressure and the dopant gas to silane mole ratio. A dependence of the axial uniformity on pressure and B2H6/S1H4 mole ratio is put forward, and this effect appears...
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ژورنال
عنوان ژورنال: Le Journal de Physique IV
سال: 1993
ISSN: 1155-4339
DOI: 10.1051/jp4:1993315